发明名称 PLANT FOR VACUUM SPUTTERING OF TOPOLOGICAL PATTERN OF THIN-FILM HYBRID MICROCIRCUIT ON SUBSTRATE
摘要 FIELD: electricity.SUBSTANCE: invention relates to microelectronics, particularly to sputtering in vacuum of topological thin-film hybrid microcircuit pattern on substrate. Plant contains first vacuum chamber with process door and with first source of metal and first mask holder with first mask and second vacuum chamber with second process door, second source of metal and second mask holder with second mask, different from first one. Proposed vacuum chamber is communicated with vacuum chambers through corresponding first and second vacuum gates. Manipulator is arranged in said chamber with possibility of enabling gripping and movement of substrate holder with substrate between chambers and its installation on mask holder with mask.EFFECT: higher efficiency and quality of evaporated pattern.1 cl, 3 dwg
申请公布号 RU2590747(C2) 申请公布日期 2016.07.10
申请号 RU20140147418 申请日期 2014.11.25
申请人 OAO "NAUCHNO-ISSLEDOVATELSKIJ INSTITUT ELEKTRONNYKH PRIBOROV" 发明人 KUDRYAVTSEV REM VASILEVICH;SIDOROV DENIS YUREVICH;YURKOVA SVETLANA VIKTOROVNA;ALYAMOV AMIR ENVEROVICH;EDVABNIK VALERIJ GRIGOREVICH;TSAJ VLADIMIR BORISOVICH;GRIGOREVA LYUBOV VASILEVNA
分类号 C23C14/56;C23C14/04 主分类号 C23C14/56
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