Method for producing salicide and a carbon nanotube metal contact

摘要

A method for producing a metal contact in a semiconductor device is disclosed. The method comprises depositing a catalyst layer in a via hole, forming a catalyst from the deposited catalyst layer, and growing a carbon nanotube structure above the catalyst in the via hole. The method further comprises forming salicide from the catalyst, applying a chemical mechanical polishing (CMP) process to the carbon nanotube structure to remove top layers of catalyst and nanotube material, and depositing metal material above the carbon nanotube structure. Growing a carbon nanotube structure comprises absorbing a precursor on a surface of the catalyst formed in the via hole, forming a metal-carbon alloy from the catalyst and the precursor, and growing a carbon nanotube structure vertically from the via bottom. The carbon nanotube structure comprises a plurality of carbon nanotubes wherein the diameters of the carbon nanotubes are limited by the catalyst size.

主权项

1. A method of producing a metal contact in a semiconductor device comprising:
depositing a catalyst material layer in a via hole; forming a catalyst from the catalyst material layer; growing a carbon nanotube structure using the catalyst in the via hole; forming a portion of salicide from the catalyst after the growth of the carbon nanotube structure; applying a chemical mechanical polishing (CMP) process to the carbon nanotube structure to remove top layers of catalyst and nanotube material; and depositing metal material above the carbon nanotube structure.