Method for forming a three-dimensional structure of metal-insulator-metal type

摘要

A method for forming a capacitive structure in a metal level of an interconnection stack including a succession of metal levels and of via levels, including the steps of: forming, in the metal level, at least one conductive track in which a trench is defined; conformally forming an insulating layer on the structure; forming, in the trench, a conductive material; and planarizing the structure.

主权项

1. An electronic device, comprising:
a stack of interconnection levels, each interconnection level including a plurality of vias and a plurality of conductive tracks, a first interconnection level of the stack of interconnection levels including:
a first conductive track;a trench formed in the first conductive track, the trench being surrounded by the first conductive track;a capacitor formed in the trench, the capacitor including a conformal first electrode formed in the trench and in contact with internal walls of the first conductive track, a conformal insulating layer formed on the first electrode and in the trench, and a conformal second electrode formed on the insulating layer and in the trench, the first electrode being distinct from the first conductive track, the first electrode having side surfaces that are completely and laterally surrounded by the first conductive track, the insulating layer being formed between the first electrode and the second electrode; anda conductive material formed in the trench and in contact with the second electrode, wherein the capacitor and conductive material fill the trench.