| 摘要 |
<p>PURPOSE:To achieve high integration by making a memory cell a single of MONOS-type nonvolatile storage element, and connecting all source lines in common. CONSTITUTION:A memory array comprises memory cells 11, 12, 13, and 14 consisting of MONOS-type nonvolatile storage elements connected to word lines 15 and 16, a source line, and bit lines 17 and 18. The writing into the memory cell 11 is performed by implanting electrons from a substrate to the gate insulating film of a MONOS-type nonvolatile storage element 10. The erasure is performed by discharging the electrons accumulated in the gate insulating film of the MONOS-type nonvolatile storage element to the substrate. Hereby, the MOS element for address, which was required in the past, becomes needless. Accordingly, high integration can be achieved.</p> |
