| 摘要 |
<p>PURPOSE: To prevent the growth of non-volatile mixture in a connection window by conducting an etching treatment in two stages for the formation of a connection window, and to improve the reliability of an element by making uniform the connection resistance and the surface resistance of the lower conductive layer. CONSTITUTION: An interlayer insulating layer 20 is formed in such a manner that the surface of the lower conductive layer 100, which is formed in a state, wherein a second conductivity layer 100b is covered on a first conductivity layer 100a, becomes flat. After a photosensitive film pattern 72 has been formed on the insulating layer 20, the prescribed quantity of the interlayer insulating layer 20 on the region, where a connection window 9 is formed, is removed by conducting an isotropic etching, and the external dimensional ratio of the connection window 9 is decreased. Then, the connection window 9 is formed by removing the interlayer insulating film 20 on the region, where the connection window is formed by plasma-etching or reactive ion-etching using a chlorine mixed gas. In this case, the first conductivity layer 100a should not be exposed, so that a non-volatile mixture is not generated by the reaction between the chlorine mixed gas and the first conductivity layer 100a.</p> |
