发明名称 Polishing apparatus and polishing method
摘要 A polishing apparatus capable of achieving a good control operation for a distribution of remaining film thickness is disclosed. The polishing apparatus includes: a top ring configured to apply pressures separately to zones on a back surface of a substrate to press a front surface of the substrate against a polishing pad; a film-thickness sensor configured to obtain a film-thickness signal that varies in accordance with a film thickness of the substrate; and a polishing controller configured to manipulate the pressures. The polishing controller calculates indexes of a remaining film thickness in zones on the front surface of the substrate, manipulate the pressures based on the indexes for controlling a distribution of the remaining film thickness, and update at least one of control parameters using polishing data obtained during polishing of the substrate.
申请公布号 US9390986(B2) 申请公布日期 2016.07.12
申请号 US201514637282 申请日期 2015.03.03
申请人 Ebara Corporation 发明人 Kobayashi Yoichi;Yagi Keita
分类号 H01L21/66;B24B37/005;B24B49/10;B24B49/12;H01L21/306;H01L21/67 主分类号 H01L21/66
代理机构 Baker & Hostetler LLP 代理人 Baker & Hostetler LLP
主权项 1. A polishing apparatus comprising: a polishing table for supporting a polishing pad; a top ring configured to apply pressures separately to zones on a back surface of a substrate to press a front surface of the substrate against the polishing pad; a film-thickness sensor configured to obtain a film-thickness signal that varies in accordance with a film thickness of the substrate; and a polishing controller configured to manipulate the pressures, the polishing controller is configured to calculate indexes of a remaining film thickness in zones on the front surface of the substrate, manipulate the pressures based on the indexes for controlling a distribution of the remaining film thickness, and update at least one of control parameters using polishing data obtained during polishing of the substrate, the control parameters being used in controlling of the distribution of the remaining film thickness, the at least one of control parameters comprising a ratio of a changing rate of each index to corresponding one of the pressures.
地址 Tokyo JP