发明名称 |
Back-to-back stacked integrated circuit assembly and method of making |
摘要 |
An integrated circuit assembly includes a first substrate and a second substrate, with active layers formed on the first surfaces of each substrate, and with the second surfaces of each substrate coupled together. A method of fabricating an integrated circuit assembly includes forming active layers on the first surfaces of each of two substrates, and coupling the second surfaces of the substrates together. |
申请公布号 |
US9390974(B2) |
申请公布日期 |
2016.07.12 |
申请号 |
US201213725403 |
申请日期 |
2012.12.21 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
Stuber Michael A.;Molin Stuart B. |
分类号 |
H01L21/30;H01L21/78;H01L25/065;H01L25/00;H01L21/683;H01L23/00 |
主分类号 |
H01L21/30 |
代理机构 |
Haynes and Boone, LLP |
代理人 |
Haynes and Boone, LLP |
主权项 |
1. A method of forming an integrated circuit assembly, the method comprising:
providing a first substrate having a first surface and a second surface; forming a first active layer on the first surface of the first substrate; providing a second substrate having a first surf ace and a second surface, wherein the second substrate includes a second active layer formed on the first surface of the second substrate; contact bonding the second surface of the second substrate to the second surface of the first substrate to form a bonded substrate assembly without a vertical electrical connection through the first substrate and the second substrate and without previously singulating the first substrate and the second substrate into individual chips; and singulating the bonded substrate assembly into individual chips after contact bonding the second surface of the second substrate to the second surface of the first substrate. |
地址 |
San Diego CA US |