发明名称 Back-to-back stacked integrated circuit assembly and method of making
摘要 An integrated circuit assembly includes a first substrate and a second substrate, with active layers formed on the first surfaces of each substrate, and with the second surfaces of each substrate coupled together. A method of fabricating an integrated circuit assembly includes forming active layers on the first surfaces of each of two substrates, and coupling the second surfaces of the substrates together.
申请公布号 US9390974(B2) 申请公布日期 2016.07.12
申请号 US201213725403 申请日期 2012.12.21
申请人 QUALCOMM INCORPORATED 发明人 Stuber Michael A.;Molin Stuart B.
分类号 H01L21/30;H01L21/78;H01L25/065;H01L25/00;H01L21/683;H01L23/00 主分类号 H01L21/30
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A method of forming an integrated circuit assembly, the method comprising: providing a first substrate having a first surface and a second surface; forming a first active layer on the first surface of the first substrate; providing a second substrate having a first surf ace and a second surface, wherein the second substrate includes a second active layer formed on the first surface of the second substrate; contact bonding the second surface of the second substrate to the second surface of the first substrate to form a bonded substrate assembly without a vertical electrical connection through the first substrate and the second substrate and without previously singulating the first substrate and the second substrate into individual chips; and singulating the bonded substrate assembly into individual chips after contact bonding the second surface of the second substrate to the second surface of the first substrate.
地址 San Diego CA US