发明名称 BOAT FOR GROWING A SINGLE CRYSTAL OF A SEMICONDUCTOR COMPOUND
摘要 <p>A boat for growing a monocrystalline GaAs comprising a cylindrical boat body, a conical shoulder extending downwardly from a lower end of the boat body and having gradually reduced diameters along its length, and a cylindrical side wall extending downwardly from the shoulder and defining a seed well therein. The boat also comprises a small aperture at the bottom wall of the seed well, thereby capable of uniformly producing a α-SiO2 when the single crystal of GaAs is grown using the vertical-gradient freeze method. The aperture has a dimension only allowing gases to be vented out of the boat.</p>
申请公布号 WO1993010284(A1) 申请公布日期 1993.05.27
申请号 KR1992000062 申请日期 1992.11.12
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