发明名称 Method, apparatus and substrates for lithographic metrology
摘要 A substrate has three or more overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values and an assumed non-linear relationship between overlay and target asymmetry, thereby to correct for feature asymmetry. The periodic relationship in the region of zero bias and P/2 has gradients of opposite sign. The calculation allows said gradients to have different magnitudes as well as opposite sign. The calculation also provides information on feature asymmetry and other processing effects. This information is used to improve subsequent performance of the measurement process, and/or the lithographic process.
申请公布号 IL245795(D0) 申请公布日期 2016.07.31
申请号 IL20160245795 申请日期 2016.05.23
申请人 ASML NETHERLANDS B.V. 发明人
分类号 G03F 主分类号 G03F
代理机构 代理人
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