| 摘要 |
The nonvolatile memory element is mfd. by (a) forming a field oxide film (24) on the silicon substrate (21), (b) etching the film (24), (c) thermally growing an oxide film (26), (d) coating a first polysilicon film (27), an insulating film (28) and a second polysilicon film (29), (e) forming a floating gate (30) and a control gate (31) by patterning the films (27)(29), (f) forming a source/drain region (32,33), and (g) forming an insulating film (34) and a metal electrode (35).
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