发明名称 TRI-STATE OUTPUT CIRCUIT OF BICMOS
摘要 The circuit having low power consumption and strong driving charactristic comprises PMOS and NMOS transistors (M1,M2,M3) having gates connected to an input node (Data in), NMOS transistors (M6,M8,M9) having gates to be applied with tristate control signal, a PMOS transistor (M5) having a gate to be applied with tristate control signal and having a drain connected to a driving voltage source, an NMOS transistor (M7) having a gate connected to the TR (M5) source and TR (M6) drain, and a drain connected to the TR (M3) source, an NMOS transistor (M4) connected to the TR's (M7,M1,M8), an NPN transistor (Q1) connected to the TR's (M1,M3), the driving voltage source (VDD) and an output node (Data out), an NPN transistor (Q2) connected to the TR's (M7,M9), and output node, and a capacitor (C1) connected between the output node and a ground.
申请公布号 KR930004353(B1) 申请公布日期 1993.05.26
申请号 KR19900005888 申请日期 1990.04.26
申请人 KOREA TELCOMMUNICATIONS CORP.;KOREA ELECTRONICS & TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 SONG, WON - CHOL;KIM, YONG - MIN;YU, HA - YONG;HYON, JIN - IL
分类号 H03K17/687;H03K19/00;H03K19/0175;H03K19/08;H03K19/0944;(IPC1-7):H03K19/094 主分类号 H03K17/687
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