发明名称 THIN FILM TRANSISTOR FOR LCD
摘要 gate electrode (2) connected to gate line, which is unidirectionally arrayed on the transparent substrate (1); insulating layer (3); amorphous silicon layer (6); source electrode (7) electrically connected to source line, which is orthogonally arrayed to gate line; and drain electrode (8) connected to pixel electrode (5). Drain electrode and pixel electrode are monolithically integrated by aluminium. The thickness of pixel electrode is 50-80 angstroms.
申请公布号 KR930004348(B1) 申请公布日期 1993.05.26
申请号 KR19900015131 申请日期 1990.09.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN, KI - CHON
分类号 H01L27/12;(IPC1-7):H01L27/12 主分类号 H01L27/12
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