发明名称 |
THIN FILM TRANSISTOR FOR LCD |
摘要 |
gate electrode (2) connected to gate line, which is unidirectionally arrayed on the transparent substrate (1); insulating layer (3); amorphous silicon layer (6); source electrode (7) electrically connected to source line, which is orthogonally arrayed to gate line; and drain electrode (8) connected to pixel electrode (5). Drain electrode and pixel electrode are monolithically integrated by aluminium. The thickness of pixel electrode is 50-80 angstroms.
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申请公布号 |
KR930004348(B1) |
申请公布日期 |
1993.05.26 |
申请号 |
KR19900015131 |
申请日期 |
1990.09.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN, KI - CHON |
分类号 |
H01L27/12;(IPC1-7):H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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