发明名称 A METHOD OF GROWING GROUP II-VI MIXED COMPOUND SEMICONDUCTOR AND AN APPARATUS USED THEREFOR
摘要 The method comprises the following steps of : providing a reaction chamber (1) comprising a rotatable substrate stage (2), a plurality of nozzles (4-1, 4-2, ..., 4-6) aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism (14, 15) for moving the substrate stage at least in the nozzle alignment direction (Y) and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance (D) between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage. <IMAGE>
申请公布号 EP0505251(A3) 申请公布日期 1993.05.26
申请号 EP19920400684 申请日期 1992.03.16
申请人 FUJITSU LIMITED 发明人 MURAKAMI, SATOSHI;SAKACHI, YOICHIRO;NISHINO, HIRONORI;SAITO, TETSUO;MARUYAMA, KENJI
分类号 C30B25/02;C30B25/14 主分类号 C30B25/02
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