| 摘要 |
PURPOSE:To prevent the yield of fine defects during forming process of the element by forming a damaged layer on the back surface of a substrate before an element is formed on the upper surface of the semiconductor substrate and forming the semiconductor layer on the back surface so that the semiconductor layer with a specified thickness is obtained. CONSTITUTION:The back surface 2 of a silicon substrate 1 is lapped by using, e.g., 1,200 mesh alumina and the surface is roughened. Then, the damaged layer 4 is formed. In lapping, the silicon substrate 1 is excessively cut out, and the thickness of 200-250mum is obtained. Then, a silicon layer 5 is formed on the back surface of the silicon substrate, and the silicon substrate with a specified thickness is obtained. Thereafter, an element is provided on the upper surface of the silicon substrate 1 by an ordinary method. In this method, since fine defects yielded in the element forming process such as a heating process and the like are effectively absorbed, the number of the defects are decreased, and the yield rate of the element formation can be improved. |
