| 摘要 |
Disclosed is a method of forming an interconnection pattern which causes no disconnection even when making contact with water in the atmosphere. An interconnection layer is formed on a semiconductor substrate. The interconnection layer is selectively etched by employing a halogen-type gas, to form an interconnection pattern. Ultraviolet rays are directed onto the interconnection pattern in the atmosphere including a hydrogen gas. This method avoids generation of hydrogen halogenide which causes corrosion of metal interconnections even when the metal interconnections make contact with water in the atmosphere, thereby to prevent disconnections of the metal interconnections.
|
