| 摘要 |
METHOD OF PURIFYING AND DEPOSITING GROUP IIIa AND GROUP Va COMPOUNDS TO PRODUCE EPITAXIAL FILMS The invention relates to a method for purifying group IIIa and group Va compounds for deposition onto a substrate to produce epitaxial films. Prior art methods are unable to reproducibly produce quantities of high purity compounds. The present invention provides a method for obtaining quantities of group IIIa and group Va compounds having semi-conductor grade purity. Relatively crude group IIIa and group Va compounds are separated from impurities by conveying the mixture through separating columns (42,44, 110, 112). The isolated group IIIa or group Va compound is condensed by a condenser (56, 122) and then collected (58, 129). The group IIIa compounds are additionally demisted (132) subsequent to condensing to improve the recovery of the purified compound. Purified compounds may then be used in combination with a dopant to produce a crystal layer on a substrate by thermally decomposing the compounds and dopant. |
