| 摘要 |
<p>PURPOSE:To allow high integration and stable readout operation and improve insulation between a floating gate and a control gate. CONSTITUTION:A transistor area is provided with a memory transistor and a select transistor and a drain diffused layer 11 and a source diffused layer 12 are also used as the source and the drain for both transistors. On a tunnel oxide film 6 close to the drain diffused layer 11, a floating gate 7a whose top plane is projected in a curve is provided. The one edge of a common gate 10a is provided on the floating gate 7a through an insulating film 8 so as to operate as the control gate of a memory transistor. The other edge of the common gate 10a is provided on a gate oxide film 9 so as to operate as the gate for the select transistor.</p> |
