| 摘要 |
<p>PURPOSE:To provide the thin-film diode which exhibits a nonlinear V-I characteristic symmetrical with voltage impression of both polarities and the process for production thereof. CONSTITUTION:A 1st thin-film layer 5 and 2nd thin-film layer 6 which consist of non-doped amorphous Si and do not contain hydrogen are provided by sputtering film formation using a sputtering target essentially consisting of Si in gaseous argon at the boundary between the lower electrode layer 2 and nonlinear resistance layer 3-1 and at the boundary between the nonlinear resistance layer 3-1 and upper electrode layer 4 of the thin-film diode constituted by laminating the lower electrode layer 2, the nonlinear resistance layer 3-1 essentially consisting of SiNx of non-chemical equiv., SiO2 of chemical equiv., etc., and the upper electrode layer 4 on an insulating substrate 1.</p> |
