| 摘要 |
PURPOSE:To obtain a title device which is based on silicon semiconductor and emits light by no dependence on light excitation by making a silicon semiconductor surface porous, which is overlaid with a compound layer of an energy gap 2eV or more, and by forming a pn junction of the silicon semiconductor and the compound layer. CONSTITUTION:The surface of a p-type silicon semiconductor 1 is anodically treated to be porous. Also an n-type silicon is irradiated with light for anodic treatment. Next, the surface of the porous silicon semiconductor 2 is overlaid with an n-type wide gap compound layer 3 of an energy gap 2eV or more. The top and the bottom of this laminated structure are provided with an n-type electrode 4 and a p-type electrode 5, respectively, and forward-biased, whereby electrons from the compound layer 3 or holes from the p-type silicon semiconductor 1 are injected into the region of the porous silicon semiconductor 2. Generated visible light emission is outputted through the transparent wide gap compound layer 3. |
