| 摘要 |
PURPOSE:To improve output of an LED chip with a thin layer of GaAs uniformly remaining over the whole of a wafer to reduce a rear electrode by forming an AlGaAs over a GaAs substrate and then a GaAs layer over it and by removing the GaAs substrate and etching the AlGaAs layer. CONSTITUTION:A p-type AlGaAs layer 2 and a p-type GaAs layer 3, which are etched away later, are epitaxially grown over a p-type GaAs substrate l, and a p-type AlGaAs layer 4, a p-type AlGaAs layer 5, an AlGaAs light emitting layer 6, an n-type AlGaAs layer 7, and an n-type GaAs layer 8 are formed over those layers. Next, the substrate 1 is removed, and an AlGaAs layer 2 is removed by selective etching, resulting in exposure of a thin GaAs layer 3 to the rear of AlGaAs. Next, electrodes 9, 10 are formed over the GaAs layer 3 and the GaAs layer 8, and the GaAs is selectively removed to obtain an LED wafer equipped with the electrodes 9, 10 of low contact resistance. |
