LIGHT EMISSION DEVICE USING III-V GROUP COMPOUND POLYCRYSTALLINE SEMICONDUCTOR MATERIAL AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide a title device which can increase light emission efficiency and improve reliability. CONSTITUTION:In this device which contains an n-type semiconductor polycrystalline layer 15 and a p-type semiconductor polycrystalline layer 16, the n-type semiconductor polycrystalline layer and the p-type semiconductor polycrystalline layer consist of a light emission region formed of a polycrystal of an average grain size of 0.6mum or more and a wiring region formed of a polycrystal of an average grain size of 0.5mum or less.