发明名称 |
Thin-film semiconductor device and method of fabricating the same |
摘要 |
A thin-film semiconductor device having a vertical TFT which includes a gate insulating film formed on a sidewall of a throughhole formed in an insulating layer; a thin-film semiconductor layer formed on the gate insulating film; and a gate electrode formed within the insulating layer. The gate electrode, the gate insulating film, and the thin-film semiconductor layer together form a lateral MOS structure. The thin-film semiconductor layer is connected to a bit line at the bottom of the throughhole and to a storage node of a capacitor formed over the switching transistor.
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申请公布号 |
US5214296(A) |
申请公布日期 |
1993.05.25 |
申请号 |
US19920848840 |
申请日期 |
1992.03.10 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKATA, YOSHIRO;MATSUO, NAOTO;YABU, TOSHIKI;MATSUMOTO, SUSUMU;OKADA, SHOZO |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;H01L29/78;H01L29/786 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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