| 摘要 |
<p>PURPOSE:To lengthen life as a memory and provide a non-destructive readout ferroelectric memory device which is suitable for integration. CONSTITUTION:The device is constituted of a matrix memory 1 composed of a ferroelectric capacitor, a line switching controller 2 and a column switching controller 3 which select a desired cell, a writing circuit 5 for writing information and a writing part 6 which generates positive/negative sign wave readout driver applied voltage and that detects the second harmonic of the response. Positive/negative voltage smaller than resistance electric field is applied on a ferroelectric film on which information is written and the phase of the second harmonic component of the current response is detected. Thus, the ferroelectric memory device is allowed to readout the information non-destructively.</p> |
