| 摘要 |
PURPOSE:To facilitate programming of mask ROM while keeping high integration density of memory cell. CONSTITUTION:Each memory cell of mask ROM comprises a MOB transistor 6 and a resistor 8 formed in parallel between the source and drain of the MOS transistor 6. The resistor 8 is subsequently disconnected as required. Each of the MOB transistors 6 arranged in the column direction is connected in series with one bit line 4 while each of the MOB transistors 6 arranged in the row direction is connected, at the gate thereof, with a same word line 2. Data is written in each memory cell by connecting or disconnecting the resistor 8. |
