| 摘要 |
PURPOSE:To prevent short circuit between a bit line and an opposing electrode due to thinning of a insulation film with a reflow property at the end of memory cell array by providing at least one dummy conductive film constituting a word electrode and a stack capacitor. CONSTITUTION:A dummy gate oxide film 103a, a dummy word electrode 104a, a dummy stack polysilicon film 107a, a dummy capacitive insulation film l08a, and a dummy capacitive polysilicon film 109a are provided on the outside of bit line contact holes C2a, C2b at the end in the direction parallel with the bit line 112 of a memory cell array. Since the bit line contact holes are formed through etching under uniform conditions over the entire region of memory cell array. short circuit can be prevented between the bit line and the capacitive polysilicon film 109 at the end of memory cell array. |
