发明名称 PN JUNCTION TYPE LIGHT EMISSION DIODE
摘要 PURPOSE:To attain enhancement in brightness with pure blue light emission of peak wavelength by piling up two kinds of p-layers which emit two kinds of blue light to improve reproducibility through independent light emission by each layer and by enabling light emission peak wavelength to be controlled. CONSTITUTION:A first p-type layer 30 doped with only acceptor impurities within a diffusion distance and a second p-type layer 40 doped with acceptor and donor impurities are piled up. A pure blue and high-brightness blue light emission diode 100 of a wavelength of 460-470nm can be obtained with light emission by these two p-type layers 30 and 40. Light emission by each layer is independently conducted to control layer thickness and the loading amount of acceptor and donor to each layer, thereby controlling light emission peak wavelength with high reproducibility and high controllability.
申请公布号 JPH05129656(A) 申请公布日期 1993.05.25
申请号 JP19910286741 申请日期 1991.10.31
申请人 SHARP CORP 发明人 SUZUKI AKIRA;FUJII YOSHIHISA;SAITO HAJIME;FURUKAWA MASAKI;TAJIMA YOSHIMITSU
分类号 H01L21/205;H01L33/20;H01L33/34;H01L33/40 主分类号 H01L21/205
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