FABRICATION OF SEMICONDUCTOR DEVICES USING PHOSPHOSILICATE GLASSES

摘要

Fabrication of Semiconductor Devices Using Phosphosilicate Glasses This invention is directed to a process of producing semiconductor i devices which involves deposition of protective glass layers by a particle beam technique from targets of phosphosilicate glass, as well as a process for production of such targets. The phosphosilicate glass containing 1-15 mole percent P2O5 is produced by a sol/gel technique which involves mixing of a fumed silica, with a surface area of 50-400 m2/g, preferably about 200 m2/g, with phosphoric acid andwater to form a sol with 20-55 wt. % silica, allowing it to gel, drying at ambient conditions, dehydrating at about 650.degree.C in an atmosphere of an inert gas and chlorine and fluorine containing gases, heating up at a certain rate of from 100 to 180.degree.C per hour to a peak sintering temperature below 1200.degree.C and cooling so as to produce amorphous and transparent glass suitable for use as a target. The glass layers are highly advantageous as encapsulating layers, diffusion barrier layers, etc., especially for optical type and semiconductor devices. Production of the phosphosilicate glass by the sol/gel technique is highly advantageous over the conventional melting technique, being faster and much less expensive than the latter.