| 摘要 |
<p>PURPOSE:To form a good crystal growth layer under a flat boundary by effec tively preventing formation of a surface deformation layer in a substrate by a contact with atmosphere. CONSTITUTION:An iodine coat is formed on a surface of a treatment substrate in a pretreatment of crystal growth, the iodine coat on the substrate transferred in atmosphere is removed in an after-process of crystal growth at a temperature of at least a boiling temperature of iodine and specified crystal growth is performed thereafter. After an oxide on the treatment substrate is removed, alcohol solution wherein iodine is included is attached and dried to form the iodine coat on the treatment substrate. In the process, a mixture which is mixed with acid for removing an oxide on the treatment substrate in a state not to decompose hydroiodic acid is attached to a silicon substrate and iodine can be precipitated through exposure.</p> |
