| 摘要 |
PURPOSE:To improve an aligning function and its accuracy by removing part of a semiconductor substrate around a protrusion with an aligning protrusion made of an insulating film on the substrate as a mask. CONSTITUTION:An SiO2 field oxide film 3, an SiO2 first interlayer insulating film 5, and a first Al interconnection layer 7 are formed on a silicon substrate. Then, an SiO2 second insulating film 10 is formed, a tapered part 6 is formed at a predetermined position, and then a second Al contact hole 8 is opened. In this case, a second Al alignment mark is simultaneously formed on a scribing area. Then, a resist mask 11 where holes are opened only in the scribing area is formed, and with the mask 11 and the alignment mark as masks the substrate 1 is removed by etching. The roughness of the alignment mark is further increased in this step. Thus, the alignment mark having high aligning accuracy can be formed on the scribing area. |
