| 摘要 |
PURPOSE:To obtain a large storage capacity in a fine plane area by a method wherein the wall at the peripheral part of a single cylindrical storage electrode is formed to be wavy and a substantial electrode area is increased. CONSTITUTION:A single-crystal Si substrate 1 is coated with a positive-type photoresist 102; after that, an exposure operation and a developing operation are executed; a resist pattern 102 whose sidewall has been formed to be wavy due to a standing-wave effect is formed. Then, a phosphorus-doped amorphous Si film 103 (a) is anisotropically etched by a dry etching method; a sidewall by the phosphorus-doped Si film 103 (a) is formed on the sidewall of the resist pattern 102. Then, the photoresist pattern 102 is removed by using an oxygen plasma asher and by an ozone sulfuric-acid cleaning operation. In succession, a heat treatment is executed; the phosphorus-doped amorphous Si film 103 (a) is activated and changed to phosphorus-doped polycrystalline Si 103 (b). Thereby, a panel can be formed of the conductive film 103 (b) which has been formed to be fine wavy. |
