| 摘要 |
PURPOSE:To provide a semiconductor porcelain substance manufacturable at a cheaper cost and having a nonlinear coefficient and mechanical strength, similar to or higher than those of a conventional one whose main component is SnO2. CONSTITUTION:After weighing, 20 mole % of high purity SnO2, 70 mole % of high purity ZnO, 5 mole % of high purity Sb2O5, and 5 mole % of high purity CoO are blended, and they are wet-agitated with a ball mill for 10 hours. After drying and grinding them, they are calcined at 1,100 deg.C for 2 hours in the atmosphere. After the calcination, the sintered body obtained is ground, and 0.05wt.% of a Ge oxide is weighed and blended with it. Then they are wet-agitated for 10 hours with a ball mill and dried. Next with this mixed powder 10-15wt.% of polyvinyl alcohol is mixed as organic binder and granulated, and formed into a disk with a diameter of 10mm and a thickness of 0.1mm by compressing them by a pressure of about 1 ton/cm<2>. Next this disk is baked in the atmosphere at 1,360-1,420 deg.C for 4 hours. After that, silver paste is applied tot he surface and rear of the disk and baked at 800 deg.C, and silver electrodes are formed. |
