| 摘要 |
PURPOSE:To enable high light output with current density enhanced at the part other than a part just under an upper electrode by overlaying a semiconductor substrate with semiconductors one after another and by providing a part of its top face with the upper electrode, and the whole of its bottom with a lower electrode, where the part just under the upper electrode has a non- conductive zone which carries no current. CONSTITUTION:A semiconductor substrate 1 is overlaid with a first semiconductor clad layer 2, a semiconductor active layer 3, a second semiconductor clad layer 4, and a semiconductor cap layer 5 one after another. The laminate is provided with an upper electrode 7 in a part of the top, and a lower electrode 8 in the whole of the bottom, and the part just under the upper electrode is provided with a non-conductive zone A which carries no current. When the upper electrode 7 and the lower electrode 8 of this light emission diode are charged with forward current, the active layer 3 emits light, which is extracted out of the top 6. At this time, diffusion potential is high and current is blocked at a contact zone of the first clad layer 2 and a third clad layer 4b where an active layer 3 is removed, resulting in electrification only at the peripheral edge where an active layer 3 is present. |
