Method for making an ohmic contact for p-type group II-VI compound semiconductors

摘要

A method for producing an ohmic contact to a p-type ZnSe semiconductor body in a molecular beam epitaxy chamber. Zinc, thermally cracked Se2 and nitrogen are injected into the chamber. A ZnSe contact layer is grown by heating the semiconductor body to a temperature less than 250 DEG C., but high enough to promote crystalline growth of the layer doped with nitrogen to a net acceptor concentration of at least 1x1018 cm-3.