| 发明名称 | Piezoelectric element and method of producing the same | ||
| 摘要 | A piezoelectric element includes a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film. A voltage is to be impressed between the lower electrode and the upper electrode to deform the piezoelectric thin film. The piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition. | ||
| 申请公布号 | US9444032(B2) | 申请公布日期 | 2016.09.13 |
| 申请号 | US201414327890 | 申请日期 | 2014.07.10 |
| 申请人 | DENSO CORPORATION;National University Corporation TOYOHASHI UNIVERSITY OF TECHNOLOGY | 发明人 | Matsushita Noriyuki;Wado Hiroyuki;Ishida Makoto;Akai Daisuke |
| 分类号 | G02B26/08;G02B26/10;G02B26/12;H01L41/187;H01L41/08;H01L41/297;G02B6/35;H01L41/047;H01L41/29;H01L41/316;H01L41/318;H01L41/319;G02F1/29 | 主分类号 | G02B26/08 |
| 代理机构 | Posz Law Group, PLC | 代理人 | Posz Law Group, PLC |
| 主权项 | 1. A piezoelectric element comprising: a substrate having a first surface with a predetermined orientation; a lower electrode layered on the first surface of the substrate; a piezoelectric thin film layered on the lower electrode and having a piezoelectric body; and an upper electrode layered on the piezoelectric thin film, the piezoelectric thin film being deformed by impressing a voltage between the lower electrode and the upper electrode, wherein the piezoelectric thin film is epitaxially grown on the lower electrode using a physical vapor deposition or a chemical vapor deposition at a temperature higher than or equal to 650 degrees Celsius, such that the arithmetic average coarseness Ra of the piezoelectric thin film is approximately equal to 20 nm. | ||
| 地址 | Kariya JP | ||