| 发明名称 |
FinFET with constrained source-drain epitaxial region |
| 摘要 |
A method includes forming a plurality of fins on a substrate, conformally depositing a nitride liner above and in direct contact with the plurality of fins and the substrate, removing a top portion of the nitride liner above the plurality of fins to expose a top surface of the plurality of fins, forming a gate over a first portion of the plurality of fins, a second portion of the plurality of fins remains exposed, forming spacers on opposite sidewalls of the nitride liner on the second portion of the plurality of fins, removing the second portion of the plurality of fins to form a trench between opposing sidewalls of the nitride liner, and forming an epitaxial layer in the trench, the lateral growth of the epitaxial layer is constrained by the nitride liner to form constrained source-drain regions. |
| 申请公布号 |
US9443854(B2) |
申请公布日期 |
2016.09.13 |
| 申请号 |
US201514920938 |
申请日期 |
2015.10.23 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Greene Brian J.;Kumar Arvind;Mocuta Dan M. |
| 分类号 |
H01L27/088;H01L21/8234;H01L29/66;H01L29/78;H01L29/165;H01L21/3105;H01L29/04;H01L21/84 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
Kelly L. Jeffrey;Meyers Steven |
| 主权项 |
1. A method comprising:
forming a plurality of fins on a substrate; conformally depositing a nitride liner above and in direct contact with the plurality of fins and the substrate; removing a top portion of the nitride liner above the plurality of fins to expose a top surface of the plurality of fins; forming a gate over a first portion of the plurality of fins, a second portion of the plurality of fins remains exposed; forming spacers on opposite sidewalls of the nitride liner on the second portion of the plurality of fins; removing the second portion of the plurality of fins to form a trench between opposing sidewalls of the nitride liner; and forming an epitaxial layer in the trench, wherein lateral growth of the epitaxial layer is constrained by the nitride liner to form constrained source-drain regions. |
| 地址 |
Armonk NY US |
