| 摘要 |
An embodiment of the present invention relates to an ultraviolet light emitting device with improved luminance, a method for manufacturing a light emitting device, a light emitting package, and a lighting system. According to an embodiment of the present invention, the ultraviolet light emitting device comprises: a second conductive AlGaN-based first semiconductor layer (116); a second conductive AlGaN-based second conductive layer (117) having Si doped on the second conductive AlGaN-based first semiconductor layer (116); an active layer (114) including a quantum well and a quantum wall, and arranged on the Si-doped second conductive AlGaN-based second conductive layer (117); and a first conductive AlGaN-based semiconductor layer (113) arranged on the active layer (114). |
