| 摘要 |
According to an embodiment of the present invention, an operation method of a memory system includes a step of: reading a selected page while applying a plurality of test voltages, between a negative voltage level and a maximum voltage level, to a selected word line in serial order so as to obtain a plurality of page data; detecting center voltages corresponding to each of voltage states based on the plurality of page data; setting reading voltages according to the detected center voltages; and applying the set reading voltages to the selected word line to read data stored in the selected page. |
