IMPROVED TRANSISTOR CHANNEL

摘要

A transistor device comprises: a substrate having a first region and a second region; and a first semiconductor layer of a first semiconductor material having a first portion on a first region and a second portion on a second region. The first portion is separated from the second portion. The transistor device comprises: a second semiconductor layer of a second semiconductor material on the second portion of the first semiconductor layer; a first transistor of a first conductive type; and a second transistor of a second conductive type. The first transistor has source/drain regions of a first set formed in the first semiconductor layer, and is arranged in the first region. The second transistor has source/drain regions of a second set formed in the second semiconductor layer, and is arranged in the second region. The first conductive type is different from the second conductive type. The second semiconductor material is different from the first semiconductor material.