MANUFACTURING METHOD OF CONDUCTIVE LAYER WITH ENLARGED SURFACE AREA

摘要

The surface-maximized conductive layer for semiconductor device is prepared by (a) depositing a binary A-B alloy (2) on the top of a first insulation layer (1), (b) heat treating the alloy so that the component A is dissolved and the component B remains undissolved and precipitated on (1), (c) etching only the component A so that the component B alone remains on (1), and (d) forming a silica layer (3) on (1) and B component to give a silica layer of irregular surface. In the alloy the component A is Al, and the component B is Si which is added to the alloy by 1-30 % with respect to aluminum content.