| 摘要 |
The method for isolating a device of the semiconductor device comprises (a) forming an oxide film, an amorphous silicon film and a nitride film on the substrate in order, (b) lifting off a fixed portion of the oxide film and the nitride film to define a device region and a device-isolating region, (c) ion-implanting a first electroconductive impurity into the whole surface to form a channel stopper on the isolating region, (d) lifting off the multi-layers and oxidizing the exposed polycrystal silicon film to form a cap oxide film, (e) lifting off the nitride, silicon, cap oxide and oxide film to form a device-isolating film, (f) dip-coating an oxide film into the whole surface, ething it to form a spzer on the side wall of the isolating film, (g) forming a gate oxide film and a gate electrode on the device region in order, and (h) forming a diffusing region on the bottom of the electrode.
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