| 摘要 |
A semiconductor integrated circuit includes an interlayer insulating film in which vacancies are evenly scattered. In this structure, the effective dielectric constant of the insulating film is reduced so that capacitance between upper and lower wirings and capacitance between adjacent wirings are reduced, resulting in a high speed semiconductor device. In production, a main material of the insulating film mixed with particles of a different material is applied to a surface of a wafer where the insulating film is to be formed. Then, the main material is solidified and the particles are selectively etched with an etchant that etches the particles but does not etch the main material, resulting in an insulating film in which vacancies are uniformly distributed. In this way, an insulating film having a low effective dielectric constant is formed in a simple process, resulting in a high speed semiconductor device having a small capacitance between wirings. |
