| 摘要 |
<p>A voltage-driven switching element (1) which turns off on a reverse-bias voltage, constructed by a voltage stepping-down circuit (11) to reduce the reverse-bias voltage (-VGE) to a predetermined level during a fall time of the flowing current (IC), operating with a time delay corresponding to a turn-off delay when the reverse-bias voltage (-VGE) is applied, and by a recovering circuit (21) to issue signals to stop the operation of the voltage stepping-down circuit (11) at the end of the turn-off time of the voltage-driven switching element (1). In addition, the reverse blocking diode (15, 19) is connected in series to the emitter side of a transistor (13, 22) in a direction that blocks the forward-bias current. Furthermore, the reverse-bias control circuit (53) is constructed in such a way that the circuit is mounted in the vicinity of a voltage-driven switching element (1) made in a single chip and modularised to form a wire-bonded semiconductor device. <IMAGE></p> |
