| 发明名称 |
Method of forming an integrated circuit with self-aligned contact between closely spaced features. |
| 摘要 |
<p>Self-aligned contacts are formed to regions(e.g. 3) between closely spaced features(e.g. 5) by a method which uses differential etch rates between first and second dielectrics(e.g. 15,17) deposited over the closely spaced features(e.g. 5). <IMAGE></p> |
| 申请公布号 |
EP0542477(A1) |
申请公布日期 |
1993.05.19 |
| 申请号 |
EP19920310147 |
申请日期 |
1992.11.05 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
BOLLINGER, CHERYL ANNE;CHEN, MIN-LIANG;FAVREAU, DAVID PAUL;STEINER, KURT GEORGE;VITKAVAGE, DANIEL JOSEPH |
| 分类号 |
H01L21/316;H01L21/60;H01L21/768 |
主分类号 |
H01L21/316 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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