| 摘要 |
PURPOSE:To enhance the moisture resistance of the semiconductor device and prevent oxidation of aluminum wires undesired by interpposing an alumina, chromina or titania layer to form a multilayer wire using polyimide group resin for an interlayer insulator. CONSTITUTION:The first aluminum layer 3 is formed on SiO2 film 2 on an Si substrate 1 formed with a semiconductor element. After alumina, chromina, or titania layer 4 is evaporated in approx. 0.01-1.0mu thereon, polyimide resin 5 is rotatably coated thereon, and is preliminarily cured in N2. Then it is perforated to each the alumina, chromina or titania layer of the opening, to completely cure the polyimide resin 5, to form the second aluminum wire layer 6 thereon, to then form an insulating layer thereon, perforate it, repeat the formation of aluminum wire layer, and finally age it at approx. 500 deg.C in N2. This configuraion can improve the adhesion of the polyimide layer to improve the water resistance of the water resistance of the device, to harden the polyimide resin, and to age the entire device. Accordingly, the aluminum wire layer may not be disadvantageously oxidized to form safely the semiconductor device. |
