Thin-film device with a compound conductive layer.

摘要

Disclosed herein is a thin-film transistor comprising a gate electrode (11) formed on an insulating substrate (10), a gate insulating film (13) covering the gate electrode and the insulating substrate, an i-type semiconductor layer (14) formed on the gate insulating film, and a source electrode (16) and a drain electrode (17a) electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting metal such as Ti and Ta and oxygen or nitrogen or both. <IMAGE>