发明名称 METHOD FOR FORMING PHOTORESIST PATTERN
摘要 PURPOSE:To form a photoresist layer selectively only in a recess on a substrate with gold controllability without producing photoresist remnants, the significant retreat of the photoresist layer in the recess, damages of the substrate, etc. CONSTITUTION:After a positive type photoresist film 4 is formed on a substrate 1 which has a recess 2 in its surface and brought into contact with alkali solution such as TMAH, the photoresist film 4 is exposed to a monochromatic light 6. Then the substrate 1 is subjected to a heat treatment and, after that, to a development treatment and a photoresist layer 7 is formed only in the recess 2 of the substrate 1.
申请公布号 JPH05121309(A) 申请公布日期 1993.05.18
申请号 JP19910305694 申请日期 1991.10.25
申请人 OLYMPUS OPTICAL CO LTD 发明人 TAKAYAMA MICHIO
分类号 G03F7/26;H01L21/027;H01L21/30 主分类号 G03F7/26
代理机构 代理人
主权项
地址