| 摘要 |
PURPOSE:To eliminate the lowering of FE by forming a polycrystalline silicon film containing impurity atoms such as carbon, phosphorus atoms, etc., between a polycrystalline silicon film and a single crystal silicon for emitter area. CONSTITUTION:A polycrystalliine silicon film 12 containing carbon through the CVD method is formed of about 100Angstrom thickness on the surface of a base area 9 inside the opening surrounded by an insulation film 10. The film 12 containing carbon atoms formed on an emitter 14 is prevent from epitaxial growth, compared with the case where non-dope polycrystalline silicon film is directly grown on the single crystal silicon film, because of the addition of carbon atom. Thus, the lowering of diffusion rate of arsenic atom in the polycrystalline silicon layer due to epitaxial growth can be eliminated.
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