| 摘要 |
A chemical vapor deposition apparatus having a gas purifier for purifying a raw-material gas such as AsH3 or PH3 gas, the gas purifier being constructed as the combination of an organometal and a molecular sieve. Gas of AsH3, PH3 or the like is introduced into the organometal whereby impurities such as H2O or O2 contained in the raw-material gas (AsH3, PH3, etc) are removed. Further, organometal vapor occured from gas purifier is removed by the molecular sieve.
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