| 摘要 |
PURPOSE:To obtain a method for extending an electrode surface at a low temperature and with a simple process, by forming fine unevenness on the electrode surface. CONSTITUTION:On a BPSG film 6 turning to a first insulating film, an SiO2 film 8 turning to a second insulating film having a rough surface is formed by thermal decomposition reaction of organic source and oxygen which contains ozone of 4wt.% or more. Then a first semiconductor film 11 turning to a storage electrode is formed. Thereby the surface area of an electrode is extended, and sufficient capacitance for a small cell area can be obtained at a low temperature and with a simple process. |
