Semiconductor device manufacturing method and semiconductor device manufactured thereby

摘要

A method for manufacturing a semiconductor device comprises the steps of forming a polysilicon spacer on an after-oxide film on a semiconductor substrate, doping the polysilicon spacer by ion-implanting an impurity such as phosphorus, thermally diffusing the impurity into the polysilicon spacer, and eliminating the polysilicon spacer in part by etching. A semiconductor device manufactured by this method is also disclosed.